Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETs
نویسندگان
چکیده
The poor interface quality of the Silicon Carbide/oxide (SiC/SiO2) severely degrades electron surface channel mobility in SiC-based power devices. Based on transfer characteristic simulations (with a deck calibrated to experimental data), this work predicts improved with stress engineering, well-established technique for performance enhancement low silicon (Si) transistor technology. Process simulation Si and devices Nitride (Si3N4) stressor layer has been carried out estimate generated channel. SiC D-MOSFET we have also computed effect varying magnitude, direction, position device.
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2021
ISSN: ['2168-6734']
DOI: https://doi.org/10.1109/jeds.2021.3116098